NXP PBSS5350SS,115

NXP · Transistors (BJTs) · MPN PBSS5350SS,115

No reviews yet — be the first to review NXP PBSS5350SS,115.

Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Pd - Power Dissipation2W
Emitter-Base Voltage VEBO5V
typePNP
Vce Saturation(VCE(sat))370mV
Number2 PNP
Current - Collector(Ic)2.7A
Operating Temperature-65℃~+150℃

Technical details

50V 2W PNP 2.7A SOP-8 Bipolar Transistor Arrays RoHS

Related Transistors (BJTs)