NXP PBSS5330PAS115

NXP · Transistors (BJTs) · MPN PBSS5330PAS115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)165MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation2.5W
typePNP
Number1 PNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))320mV
Operating Temperature-55℃~+175℃

Technical details

30V PNP 1 PNP 3A Single Bipolar Transistors RoHS

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