NXP PBSS5240X115

NXP · Transistors (BJTs) · MPN PBSS5240X115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1.35W
typePNP
Number1 PNP
Current - Collector(Ic)2A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))630mV

Technical details

40V PNP 1 PNP 2A Single Bipolar Transistors RoHS

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