NXP PBSS5230QA147

NXP · Transistors (BJTs) · MPN PBSS5230QA147

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)170MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation740mW
typePNP
Number1 PNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))180mV
Operating Temperature-55℃~+150℃

Technical details

30V PNP 1 PNP 2A Single Bipolar Transistors RoHS

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