NXP PBSS4160QA147

NXP · Transistors (BJTs) · MPN PBSS4160QA147

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation740mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))245mV
Operating Temperature-55℃~+150℃

Technical details

60V 1 NPN NPN 1A Single Bipolar Transistors RoHS

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