NXP PBSS4160PANS115

NXP · Transistors (BJTs) · MPN PBSS4160PANS115

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)175MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation760mW
typeNPN
Number2 NPN
Vce Saturation(VCE(sat))240mV
Operating Temperature-55℃~+150℃

Technical details

60V NPN 2 NPN Single Bipolar Transistors RoHS

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