NXP PBHV9560Z115

NXP · Transistors (BJTs) · MPN PBHV9560Z115

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)38MHz
Collector - Emitter Voltage VCEO600V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1.4W
typePNP
Number1 PNP
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃

Technical details

600V PNP 1 PNP 500mA Single Bipolar Transistors RoHS

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