NXP PBHV8515QA147

NXP · Transistors (BJTs) · MPN PBHV8515QA147

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)75MHz
Collector - Emitter Voltage VCEO150V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

150V 1 NPN NPN 500mA Single Bipolar Transistors RoHS

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