NXP · Transistors (BJTs) · MPN BFU910F115
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| Transition frequency(fT) | 90GHz |
|---|---|
| Collector - Emitter Voltage VCEO | 2V |
| Emitter-Base Voltage VEBO | 1.5V |
| Pd - Power Dissipation | 300mW |
| type | NPN |
| Current - Collector(Ic) | 15mA |
| Operating Temperature | -40℃~+150℃ |
2V NPN 15mA Single Bipolar Transistors RoHS