NXP BFU768F,115

NXP · Transistors (BJTs) · MPN BFU768F,115

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Specifications

Current - Collector Cutoff100nA
Emitter-Base Voltage(Vebo)1V
Collector - Emitter Voltage VCEO2.8V
DC Current Gain155
Pd - Power Dissipation220mW
Current - Collector(Ic)70mA
Transition frequency(fT)110GHz
typeNPN
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 2.8V 70mA 110GHz 220mW Surface Mount SOT-343F

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