NXP BFU730F,115

NXP · Transistors (BJTs) · MPN BFU730F,115

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Specifications

Current - Collector Cutoff100nA
Emitter-Base Voltage(Vebo)1V
Collector - Emitter Voltage VCEO2.8V
Pd - Power Dissipation197mW
DC Current Gain205
Current - Collector(Ic)30mA
Transition frequency(fT)55GHz
typeNPN
Number1 NPN

Technical details

2.8V 197mW 205 30mA NPN SOT-343F Bipolar RF Transistors RoHS

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