NXP BFU725F/N1,115

NXP · Transistors (BJTs) · MPN BFU725F/N1,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)55GHz
Collector - Emitter Voltage VCEO2.8V
Emitter-Base Voltage VEBO1V
DC Current Gain160
Pd - Power Dissipation136mW
Number1 NPN
typeNPN
Current - Collector(Ic)40mA
Operating Temperature-
Vce Saturation(VCE(sat))-

Technical details

Bipolar (BJT) Transistor NPN 2.8V 40mA 55GHz 136mW Surface Mount SOT-343F

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