NXP BFU660F,115

NXP · Transistors (BJTs) · MPN BFU660F,115

No reviews yet — be the first to review NXP BFU660F,115.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)21GHz
Collector - Emitter Voltage VCEO5.5V
Emitter-Base Voltage VEBO2.5V
DC Current Gain180
Pd - Power Dissipation225mW
Number1 NPN
typeNPN
Current - Collector(Ic)60mA

Technical details

Bipolar (BJT) Transistor NPN 5.5V 60mA 21GHz 225mW Surface Mount SOT-343F

Related Transistors (BJTs)