NXP BFU630F,115

NXP · Transistors (BJTs) · MPN BFU630F,115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)21GHz
Collector - Emitter Voltage VCEO5.5V
Emitter-Base Voltage VEBO2.5V
DC Current Gain90
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)30mA

Technical details

5.5V 90 1 NPN NPN 30mA SOT-343F Single Bipolar Transistors RoHS

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