NXP BFU590QX

NXP · Transistors (BJTs) · MPN BFU590QX

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff1nA
Collector - Emitter Voltage VCEO16V
DC Current Gain60
Pd - Power Dissipation2W
Operating Temperature-40℃~+150℃
Current - Collector(Ic)200mA
Transition frequency(fT)8.5GHz
Vce Saturation(VCE(sat))-
typeNPN

Technical details

16V 60 2W 200mA NPN SOT-89-3 Bipolar RF Transistors RoHS

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