NXP · Transistors (BJTs) · MPN BFU590GX
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| Emitter-Base Voltage(Vebo) | 3V |
|---|---|
| Current - Collector Cutoff | 1nA |
| Collector - Emitter Voltage VCEO | 16V |
| DC Current Gain | 60 |
| Pd - Power Dissipation | 2W |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 200mA |
| Transition frequency(fT) | 8.5GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
| Number | 1 NPN |
16V 60 2W 200mA NPN SOT-223-4 Bipolar RF Transistors RoHS