NXP · Transistors (BJTs) · MPN BFU580QX
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| Emitter-Base Voltage(Vebo) | 3V |
|---|---|
| Current - Collector Cutoff | 1nA |
| Collector - Emitter Voltage VCEO | 16V |
| Pd - Power Dissipation | 1W |
| DC Current Gain | 60 |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Transition frequency(fT) | 10.5GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
Bipolar (BJT) Transistor NPN 16V 100mA 10.5GHz 1000mW Surface Mount SOT-89