NXP BFU580G115

NXP · Transistors (BJTs) · MPN BFU580G115

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Specifications

Transition frequency(fT)11GHz
Collector - Emitter Voltage VCEO16V
Emitter-Base Voltage VEBO3V
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)60mA

Technical details

16V NPN 60mA Single Bipolar Transistors RoHS

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