NXP BFU550XAR

NXP · Transistors (BJTs) · MPN BFU550XAR

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Specifications

Emitter-Base Voltage(Vebo)2V
Current - Collector Cutoff1nA
Collector - Emitter Voltage VCEO12V
DC Current Gain95
Pd - Power Dissipation450mW
Operating Temperature-40℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)11GHz
Vce Saturation(VCE(sat))-
typeNPN
Number1 NPN

Technical details

Bipolar (BJT) Transistor NPN 12V 50mA 11GHz 450mW Surface Mount SOT-143-4

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