NXP BFU550WX

NXP · Transistors (BJTs) · MPN BFU550WX

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Specifications

Emitter-Base Voltage(Vebo)3V
Current - Collector Cutoff1nA
Collector - Emitter Voltage VCEO12V
DC Current Gain60
Pd - Power Dissipation450mW
Operating Temperature-40℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)11GHz
Vce Saturation(VCE(sat))600mV
typeNPN
Number1 NPN

Technical details

12V 60 450mW 50mA NPN SOT-23-6 Bipolar RF Transistors RoHS

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