NXP BFU550WF

NXP · Transistors (BJTs) · MPN BFU550WF

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Specifications

Emitter-Base Voltage(Vebo)2V
Current - Collector Cutoff1nA
Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation450mW
DC Current Gain60
Operating Temperature-40℃~+150℃
Current - Collector(Ic)50mA
Transition frequency(fT)11GHz
typeNPN

Technical details

12V 450mW 60 50mA NPN SC-70 Bipolar RF Transistors RoHS

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