NXP BFU550215

NXP · Transistors (BJTs) · MPN BFU550215

No reviews yet — be the first to review NXP BFU550215.

Specifications

Current - Collector Cutoff1nA
Transition frequency(fT)11GHz
Collector - Emitter Voltage VCEO16V
Emitter-Base Voltage VEBO3V
Pd - Power Dissipation450mW
Number1 NPN
typeNPN
Current - Collector(Ic)80mA
Operating Temperature-40℃~+150℃

Technical details

16V 1 NPN NPN 80mA Single Bipolar Transistors RoHS

Related Transistors (BJTs)