NXP BFU530WX

NXP · Transistors (BJTs) · MPN BFU530WX

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Specifications

Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation450mW
DC Current Gain60
Current - Collector(Ic)40mA
Operating Temperature-40℃~+150℃
Transition frequency(fT)11GHz
typeNPN

Technical details

12V 450mW 60 40mA NPN SC-70 Bipolar RF Transistors RoHS

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