NXP · Transistors (BJTs) · MPN BFU530W,115
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| Current - Collector Cutoff | 1nA |
|---|---|
| Transition frequency(fT) | 11GHz |
| Collector - Emitter Voltage VCEO | 12V |
| Emitter-Base Voltage VEBO | 3V |
| Pd - Power Dissipation | 450mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 65mA |
| Operating Temperature | -40℃~+150℃ |
12V 1 NPN NPN 65mA Single Bipolar Transistors RoHS