NXP BFU530AVL

NXP · Transistors (BJTs) · MPN BFU530AVL

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Specifications

Transition frequency(fT)11GHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO2V
DC Current Gain60
Pd - Power Dissipation450mW
Number1 NPN
typeNPN
Current - Collector(Ic)40mA
Operating Temperature-40℃~+150℃

Technical details

12V 60 1 NPN NPN 40mA SOT-23 Single Bipolar Transistors RoHS

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