NXP BFU530A

NXP · Transistors (BJTs) · MPN BFU530A

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Specifications

Current - Collector Cutoff1nA
Transition frequency(fT)11GHz
Collector - Emitter Voltage VCEO12V
Emitter-Base Voltage VEBO2V
DC Current Gain95
Pd - Power Dissipation450mW
Number1 NPN
typeNPN
Current - Collector(Ic)65mA
Operating Temperature-40℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

Bipolar (BJT) Transistor NPN 12V 65mA 11GHz 450mW Surface Mount SOT-23-3

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