NXP BF550/DG/B2215

NXP · Transistors (BJTs) · MPN BF550/DG/B2215

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)325MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO4V
Pd - Power Dissipation250mW
Number1 PNP
typePNP
Current - Collector(Ic)25mA
Operating Temperature-65℃~+150℃

Technical details

40V 1 PNP PNP 25mA Single Bipolar Transistors RoHS

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