NXP BCW61C/DG/B4215

NXP · Transistors (BJTs) · MPN BCW61C/DG/B4215

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO32V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation250mW
typePNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

32V PNP 100mA SOT-23-3 Single Bipolar Transistors RoHS

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