NXP · Transistors (BJTs) · MPN BCM856DS/DG/B2115
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| Current - Collector Cutoff | 5uA |
|---|---|
| Transition frequency(fT) | 175MHz |
| Collector - Emitter Voltage VCEO | 65V |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 380mW |
| type | PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
65V PNP 2 PNP 100mA Single Bipolar Transistors RoHS