NXP BC857CQA147

NXP · Transistors (BJTs) · MPN BC857CQA147

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation280mW
typePNP
Number1 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

45V PNP 1 PNP 100mA SOT-23-3 Single Bipolar Transistors RoHS

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