NXP BC857BW/ZL115

NXP · Transistors (BJTs) · MPN BC857BW/ZL115

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Specifications

Current - Collector Cutoff1nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
typePNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

65V PNP 100mA SOT-323-3 Single Bipolar Transistors RoHS

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