NXP BC857B/DG/B3215

NXP · Transistors (BJTs) · MPN BC857B/DG/B3215

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain125
Pd - Power Dissipation250mW
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-

Technical details

45V 125 PNP 100mA TO-236AB Single Bipolar Transistors RoHS

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