NXP BC856BT115

NXP · Transistors (BJTs) · MPN BC856BT115

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO65V
DC Current Gain220
Pd - Power Dissipation150mW
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))-
Operating Temperature-

Technical details

65V 220 PNP 100mA SC-75 Single Bipolar Transistors RoHS

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