NXP BC856BMB315

NXP · Transistors (BJTs) · MPN BC856BMB315

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)4.5MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation250mW
typePNP
Number1 PNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))400mV
Operating Temperature-55℃~+150℃

Technical details

60V PNP 1 PNP 100mA SOT-23-3 Single Bipolar Transistors RoHS

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