NXP · Transistors (BJTs) · MPN BC856B/DG/B3235
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| Current - Collector Cutoff | 15nA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 65V |
| DC Current Gain | 125 |
| Pd - Power Dissipation | 250mW |
| type | PNP |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 650mV |
| Operating Temperature | - |
65V 125 PNP 100mA TO-236AB Single Bipolar Transistors RoHS