NXP BC848B/DG/B3215

NXP · Transistors (BJTs) · MPN BC848B/DG/B3215

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))250mV
Operating Temperature-65℃~+150℃

Technical details

30V 1 NPN NPN 100mA Single Bipolar Transistors RoHS

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