NXP BC847QAPN147

NXP · Transistors (BJTs) · MPN BC847QAPN147

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation350mW
typeNPN+PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

45V NPN+PNP 100mA XFDFN-6 Single Bipolar Transistors RoHS

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