NXP BC847CQA147

NXP · Transistors (BJTs) · MPN BC847CQA147

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation280mW
typeNPN
Number1 NPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

45V NPN 1 NPN 100mA Single Bipolar Transistors RoHS

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