NXP · Transistors (BJTs) · MPN BC847BW/MI115
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| Current - Collector Cutoff | 5uA |
|---|---|
| Transition frequency(fT) | 100MHz |
| Collector - Emitter Voltage VCEO | 45V |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 200mW |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 200mV |
| Operating Temperature | -65℃~+150℃ |
45V NPN 1 NPN 100mA SOT-323-3 Single Bipolar Transistors RoHS