NXP BC817-25/DG215

NXP · Transistors (BJTs) · MPN BC817-25/DG215

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation250mW
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃

Technical details

45V NPN 500mA SOT-23-3 Single Bipolar Transistors RoHS

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