NXP BC807-40W/MI135

NXP · Transistors (BJTs) · MPN BC807-40W/MI135

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation290mW
typePNP
Number1 PNP
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))700mV
Operating Temperature-65℃~+150℃

Technical details

45V PNP 1 PNP 500mA SOT-323-3 Single Bipolar Transistors RoHS

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