NXP BC807-16W135

NXP · Transistors (BJTs) · MPN BC807-16W135

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation290mW
typePNP
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

45V PNP 500mA SOT-323-3 Single Bipolar Transistors RoHS

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