NXP BC52-10PAS115

NXP · Transistors (BJTs) · MPN BC52-10PAS115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)145MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1.65W
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

80V PNP 1A Single Bipolar Transistors RoHS

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