NXP 2PD602AS

NXP · Transistors (BJTs) · MPN 2PD602AS

No reviews yet — be the first to review NXP 2PD602AS.

Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

50V 1 NPN NPN 500mA Single Bipolar Transistors RoHS

Related Transistors (BJTs)