NH SS8050

NH · Transistors (BJTs) · MPN SS8050

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO25V
DC Current Gain400
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)1.5A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 25V 1.5A 300mW Surface Mount SOT-23

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