NH S8050-H

NH · Transistors (BJTs) · MPN S8050-H

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO40V
DC Current Gain40
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation225mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN 40V 0.5A 225mW Surface Mount SOT-23

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