Nexperia · Transistors (BJTs) · MPN PUMZ1,115
No reviews yet — be the first to review Nexperia PUMZ1,115.
| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 120 |
| Pd - Power Dissipation | 300mW |
| Collector - Emitter Voltage VCEO | 40V |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 100MHz |
| Vce Saturation(VCE(sat)) | 200mV |
| type | NPN+PNP |
| Number | 1 NPN + 1 PNP |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -65℃~+150℃ |
Bipolar (BJT) Transistor NPN+PNP 40V 100mA 100MHz 300mW Surface Mount SOT-363