Nexperia PUMH9-QX

Nexperia · Transistors (BJTs) · MPN PUMH9-QX

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Emitter-Base Voltage VEBO-
DC Current Gain100
Vce Saturation(VCE(sat))100mV@5mA,0.25mA
Output Voltage(VO(on))-
Input Resistor-
Resistor Ratio4.7
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,0.3V
Current - Collector(Ic)100mA

Technical details

100 300mW 100mA 50V 2 NPN (Pre-Biased) DFN1006D-2 Bipolar Transistor Arrays, Pre-Biased RoHS

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