Nexperia PUMH9,125

Nexperia · Transistors (BJTs) · MPN PUMH9,125

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Emitter-Base Voltage VEBO6V
DC Current Gain100
Vce Saturation(VCE(sat))100mV
Output Voltage(VO(on))-
Input Resistor13kΩ
Resistor Ratio5.7
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))700mV
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,300mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 300mW Surface Mount TSSOP-6

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