Nexperia PUMH20,115

Nexperia · Transistors (BJTs) · MPN PUMH20,115

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Specifications

Current - Collector Cutoff100nA
Emitter-Base Voltage VEBO10V
DC Current Gain30
Vce Saturation(VCE(sat))150mV
Input Resistor2.86kΩ
Resistor Ratio1
Pd - Power Dissipation300mW
Input Voltage (VI(on)@Ic,Vce)1.6V
Voltage - Input(Max)(VI(off))1.2V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-363

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